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input_file.m
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input_file.m
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%% Layers Structure %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% first column is the material used from the "library"
% second column is the length of the layer in nm
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=852nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=GaAs; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%AlGaAs20 10
%GaAs 11
%AlGaAs20 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=940nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=GaAs; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%GaAs 10
%InGaAs15 5
%GaAs 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=1100nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=GaAs; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%GaAs 10
%InGaAs30 12
%GaAs 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=1200nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=GaAs; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%GaAs 10
%InGaAs40 7
%GaAs 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=1300nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%AlInAs 10
%InGaAs 4
%AlInAs 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=1300nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%InP 10
%InGaAsP90 10
%InGaAsP30 12
%InGaAsP90 10
%InP 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%% lambda=1550nm @T=300K %%%%%%%%%%%%%%%%%%%%%%%%%%%%%
substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
M=[
AlInAs 10
InGaAs 10
AlInAs 10
];
%%%%%%%%%%%%%%%%%%%%%%% Sirtori, PRB, 50, 8663 (1994) %%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%AlInAs 6
%InGaAs 5.2
%AlInAs 6
%];
%substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%AlInAs 6
%InGaAs 5.9
%AlInAs 1.3
%InGaAs 2.4
%AlInAs 6
%];
%substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%AlInAs 6
%InGaAs 4.6
%AlInAs 1.0
%InGaAs 2.0
%AlInAs 1.0
%InGaAs 1.9
%AlInAs 6
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%substrate=InP; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%GaAsSb 10
%InGaAs 10
%GaAsSb 10
%];
%substrate=GaAs; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%GaAs 10
%InGaAs30 10
%GaAs 10
%InGaAs20 10
%GaAs 10
%InGaAs10 10
%GaAs 10
%InGaAs05 10
%GaAs 10
%];
%M=[
%AlAs 3
%GaAs 4.8
%AlAs 3
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%https://www.nextnano.de/nextnano3/tutorial/1Dtutorial12.htm
%substrate=GaAs; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%GaAs 10
%InGaAs30 7
%GaAs 10
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% M. Schneirt PhD thesis: "Optical Pumping: A Possible Approach towards a SiGe Quantum Cascade Laser", page 24
%https://core.ac.uk/download/pdf/20642119.pdf
%substrate=SiGe50; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%SiGe50 10
%Si 2
%SiGe50 3.5
%Si 2
%SiGe50 10
%];
% M. Schneirt PhD thesis: "Optical Pumping: A Possible Approach towards a SiGe Quantum Cascade Laser", page 86
%https://core.ac.uk/download/pdf/20642119.pdf
%substrate=SiGe25; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%Si 5
%SiGe50 3.6
%Ge 1.2
%Si 5
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% M. El-Kurdi PhD thesis: "Dispositifs a ilots de GeSi pour la microphotonique proche infrarouge sur silicium", page 54
%substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%Si 5
%SiGe50 5
%Si 5
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% Paul Harrison book:
% Quantum Wells, Wires and Dots.
% 4th edition (2016),
% Chap14: "Multiband envelope function (k.p) method", page 503
%substrate=SiGe30; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%M=[
%Si 5
%SiGe40 11.1
%Si 5
%];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%