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typo? #1

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2 changes: 1 addition & 1 deletion process_chemistry/chemistry_etching.tex
Original file line number Diff line number Diff line change
Expand Up @@ -8,7 +8,7 @@ \section{Etching silicon dioxide}
\end{itemize}
This can be prepared, for example, by mixing 113 g of $NH_4F$ in 170 ml of $H_2O$, and adding 28 ml of HF.\\
The etch rate at room temperature can range from 1000 to 2500 \r{A}/min (100-250nm/min).
This depends on the actual density of the oxide which, as an amorphous layer, can have a more compact structure (if thermally grown in is oxygen) or less compact (if grown by CVD).
This depends on the actual density of the oxide which, as an amorphous layer, can have a more compact structure (if thermally grown in oxygen) or less compact (if grown by CVD).
The following etching reaction holds:
\begin{equation}
SiO_2 + 6HF \rightarrow H_2SiF_6 + H_2O
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